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TLN217
Preliminary
TOSHIBA Infrared LED GaAAs Infrared Emitter
TLN217
Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus
The TLN217 is a high output infrared LED employing a new structure of GaAAs current confining LED chip. * * * * * Optical radiation of current confining LED chip is condensed by clear resin lens. High output and low forward voltage Peak emission wavelength: p = 870 nm (typ.) Spectral line half width: = 35 nm (typ.) Effective emission diameter: 210 x466 m (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
JEDEC
Characteristics Pulse forward current Reverse voltage Operating temperature Storage temperature Symbol IFP (Note 1) VR Topr Tstg Rating 1.1 1 -25 to 60 -40 to 90 Unit A V C C

JEITA TOSHIBA Weight: 0.18 g (typ.)
Note 1: Total 30000 cycles (total power applied time is 7.8 h). One cycle takes 137-ms power applied time and 800-ms pause time under the drive condition of 2.6 kHz frequency and 13.2% duty cycle.
IFP 50 ms
1
2
360 OFF
1
Total 30000 cycles (t = 7.8 h)
330 ms One cycle = 937 ms
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2002-02-20
TLN217
Optical and Electrical Characteristics (Ta = 25C)
Characteristics Pulse forward voltage Reverse current Effective emission spot size Radiation flux Half value angle Peak emission wavelength Spectral line half width Symbol VFP IR X Y fe q
1 2
Test Condition IFP = 300 mA, t = 10 ms VR = 1 V Half value of peak Half value of peak IFP = 300 mA, t = 10 ms IF = 50 mA IF = 50 mA IF = 50 mA (Note 2) (Note 2) (Note 3)
Min 3/4 3/4 3/4 3/4 12 3/4 850 3/4
Typ. 1.6 3/4 466 210 17 32.5 870 35
Max 1.75 100 3/4 3/4 3/4 3/4 900 3/4
Unit V mA mm mW nm nm
lp Dl
Note 2: The directions of X and Y are in the following diagram. The shaded area represents the emitting surface.
Y
(LED chip)
X
Note 3: Luminous radiation output to effective angle = 25
Precaution
* Soldering temperature: 260C (max) Soldering time: 5 s (max) (Soldering must be performed 2 mm from the bottom of the package.) When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be performed after the leads have been formed. The TLN217 is intended for a camera AF use only. Please do not use this device except for a camera.
* *
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TLN217
fe - IFP
60
(typ.)
800
IFP - VFP
(typ.)
50
Be (mW)
(mA) Pulse forward current IFP
25 60 Ta = -20C
600
40
Radiation flux
30
400
20
Ta = 60C 200 25 -20
10
0 0
200
400
600
800
0 0
1
2
3
Pulse forward current
IFP
(mA)
Pulse forward voltage VFP
(V)
Wavelength characteristic
1 IF = 50 mA Ta = 25C 0.8 30
Radiation pattern
(typ.) Ta = 25C
20 40
10
0
10
20 30 40 50 60 70 80 90 1.0
Relative intensity
0.6 60 0.4 70 80 0.2 90
50
0
0.2
0.4
0.6
0.8
0 780
Relative intensity
800 820 840 860 880 900 920 940
Wavelength l
(nm)
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TLN217
RESTRICTIONS ON PRODUCT USE
000707EAC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
4
2002-02-20

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